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Semiconductors and Semimetals, Volume 22 Lightwave Communications Technology Part C, Semiconductor Injection Lasers, II Light-Emitting Diodes free download
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Author(s):
W. T. Tsang
Publisher:
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Date :
1985
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342
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English
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0127521526
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Semiconductors and Semimetals, Volume 22 Lightwave Communications Technology Part C, Semiconductor Injection Lasers, II Light-Emitting Diodes By W. T. Tsang * Publisher: Academic Pr * Number Of Pages: 342 * Publication Date: 1985-06 * ISBN-10 / ASIN: 0127521526 * ISBN-13 / EAN: 9780127521527 Contents LISTO F CONTRIBUTO.RS. . . . . . . . . . . . . . . . . . ix TREATISFEO REWORD. . . . . . . . . . . . . . . . . . . x i FOREWOR.D . . . . . . . . . . . . . . . . . . . . . xi11 PREFACE. . . . . . . . . . . . . . . . . . . . . . . xvii ... Chapter 1 Review of InCaAsP/InP Laser Structures and Comparison of Their Performance R . J . Nelson and N . K . Dutta 1 . Introduction . . . . . . . . . . . . . . . . . . . . i I1 . Heterojunction Laser Characteristics . . . . . . . . . . . . . 4 111 . Temperature Dependence of Threshold Current . . . . . . . . . . 12 IV . Gain-Guided Laser Structures . . . . . . . . . . . . . . . 25 V . Index-Guided Laser Structures . . . . . . . . . . . . . . . 33 References . . . . . . . . . . . . . . . . . . . . 57 Chapter 2 Mode-Stabilized Semiconductor Lasers for 0.7 .0. 8- and 1.1 .1. 6-pm Regions N . Chinone and M . Nakamura I . Introduction . . . . . . . . . . . . . . . . . . . . 61 I1 . Transverse-Mode Control . . . . . . . . . . . . . . . . 62 I11 . Longitudinal-Mode Control . . . . . . . . . . . . . . . 72 IV . Conclusion . . . . . . . . . . . . . . . . . . . . 88 References . . . . . . . . . . . . . . . . . . . . 89 Chapter 3 Semiconductor Lasers with Wavelengths Exceeding 2 pm Yoshiji Horikoshi I . Introduction . . . . . . . . . . . . . . . . . . . . 93 I1 . Semiconductor Materials . . . . . . . . . . . . . . . . 94 111 . Crystal Growth and Laser Fabrication . . . . . . . . . . . . . 10 3 IV . Laser-Diode Characteristics . . . . . . . . . . . . . . . . 12 0 References . . . . . . . . . . . . . . . . . . . . 147 CONTENTS Chapter 4 The Functional Reliability of Semiconductor Lasers as Optical Transmitters B . A . Dean and M . Dixon 1 . Introduction . . . . . . . . . . . . . . . . . . . . 153 I1 . Experimental Conditions . . . . . . . . . . . . . . . . 156 Ill . Life-Test Results for a 45-Mbit/sec, AlGaAs System . . . . . . . . . 15 9 IV . Functional Life Testing for Improved Design . . . . . . . . . . . 17 0 V . Functional Reliability of an AlGaAs Laser Transmitter for Space Communication. . . . . . . . . . . . . . . . . . . . 184 VI . Summary . . . . . . . . . . . . . . . . . . . . . 187 References . . . . . . . . . . . . . . . . . . . . 189 Chapter 5 Light-Emitting-Diode Device Design R . H . Saul. Tien Pei Lee. and C . A . Burrus I . Introduction . . . . . . . . . . . . . . . . . . . . 193 11 . LED Structures . . . . . . . . . . . . . . . . . . . 19 4 111. LED Power and Modulation Bandwidth . . . . . . . . . . . . 19 8 IV . LED Device Characteristics . . . . . . . . . . . . . . . . 21 1 V . Coupling of LEDs to Optical Fibers . . . . . . . . . . . . . 22 1 VI . Dual-Wavelength LEDs . . . . . . . . . . . . . . . . . 23 2 VII . LEDs Made by MBE and VPE . . . . . . . . . . . . . . . 23 3 VIII . Conclusions . . . . . . . . . . . . . . . . . . . . 234 References . . . . . . . . . . . . . . . . . . . . 235 Chapter 6 Light-Emitting-Diode Reliability C . L . Zipfel 1 . I1 . 111 . IV . V . V1 . VII . VIII . Introduction . . . . . . . . . . . . . . . . . . . . 239 LED Life Testing . . . . . . . . . . . . . . . . . . 24 2 GaAs/GaAlAs LEDs: ResultsofAccelerated Aging . . . . . . . . . 24 3 RapidDegradation Mechanismsin GaAs/GaAIAsLEDs . . . . . . . 24 9 Gradual Degradation in GaAs/GaAIAs LEDs . . . . . . . . . . 26 0 InP/InGaAsPLEDs: ResultsofAccelerated Aging . . . . . . . . . 26 4 Degradation Mechanisms in InP/InGaAsP LEDs . . . . . . . . . 26 8 Conclusions . . . . . . . . . . . . . . . . . . . . 275 References . . . . . . . . . . . . . . . . . . . . 276 CONTENTS vii Chapter 7 Light-Emitting-Diode-Based Multimode Lightwave Systems Tien Pei Lee and Tingjie Li 1 . Introduction . . . . . . . . . . . . . . . . . . . . 281 111 . System Considerations . . . . . . . . . . . . . . . . . 286 IV . System Experiments and Field Trials . . . . . . . . . . . . . 29 2 V . Conclusions . . . . . . . . . . . . . . . . . . . . 296 References . . . . . . . . . . . . . . . . . . . . 297 I1 . Multimode-Fiber Properties . . . . . . . . . . 4 . . . . 28 2 Chapter 8 Semiconductor Laser Noise: Mode Partition Noise Kinichiro Ogawa 1 . Introduction . . . . . . . . . . . . . . . . . . . . 299 11 . A Simple Model of Mode Partition Noise . . . . . . . . . . . . 30 0 111 . Analysis of Mode Partition Noise . . . . . . . . . . . . . . 30 2 IV . Mode Partition Coefficient k Value . . . . . . . . . . . . .311 V . Theoretical k Value with and without Interaction between Lasing Modes . . . . . . . . . . .315 V1 . Statistical Measurement ofMode Partition Noise . . . . . . . . . 322 Effects of Optical Injection Locking on Mode Partition Noise . . . . . . 32 4 Appendix 1 . . . . . . . . . . . . . . . . . . . . 328 Appendix I1 . . . . . . . . . . . . . . . . . . . . 329 References . . . . . . . . . . . . . . . . . . . . 330 VII . INDEX . . . . . . . . . . . . . . . . . . . . . . . . 331 CONTENTS OF VOLUME 22 . . . . . . . . . . . . . . . . . . 33 5 CONTENTOSF PREVIOUVSO LUMES . . . . . . . . . . . . . . . 33 7
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